IRLZ34 datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Product specification

N-channel enhancement mode

IRLZ34N

Logic level TrenchMOS

TM transistor

Fig.5. Typical output characteristics, T

j = 25 ˚C.

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

DS(ON) = f(ID); parameter VGS

Fig.7. Typical transfer characteristics.

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

fs = f(ID); conditions: VDS = 25 V

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 5 V

Fig.10. Gate threshold voltage.

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

0246

100

VGS = 6.0 V

5.6

5.0

4.6

4.0

3.6

3.0

Drain current, ID (A)

Drain-source voltage, VDS (V)

1020

3040

506070

Transconductance, gfs (S)

Drain current, ID (A)

1020

3040

5060

RDS(ON)/mOhm

VGS/V =

ID/A

4.2

4.4

4.6

4.8

-100

-50

100

150

200

0.5

1.5

2.5

BUK959-60

Tmb / degC

Rds(on) normlised to 25degC

345

ID/A

VGS/V

Tj/C =

175

BUK959-60

-100

-50

100

150

200

0.5

1.5

2.5

Tj / C

VGS(TO) / V

max.

typ.

min.

February 1999

Rev 1.000

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