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J113 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # J113
Description  N-channel silicon field-effect transistors
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

J113 Datasheet(HTML) 2 Page - NXP Semiconductors

  J113 Datasheet HTML 1Page - NXP Semiconductors J113 Datasheet HTML 2Page - NXP Semiconductors J113 Datasheet HTML 3Page - NXP Semiconductors J113 Datasheet HTML 4Page - NXP Semiconductors J113 Datasheet HTML 5Page - NXP Semiconductors J113 Datasheet HTML 6Page - NXP Semiconductors  
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July 1993
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
• High speed switching
• Interchangeability of drain and
source connections
• Low R
DS on at zero gate voltage
PINNING
Note: Drain and source are
interchangeable.
1 = gate
2 = source
3 = drain
Fig.1 Simplified outline and symbol, TO-92.
handbook, halfpage
1
3
2
MAM042
s
d
g
QUICK REFERENCE DATA
J111
J112
J113
Drain-source voltage
±VDS
max.
40
40
40
V
Drain current
VDS = 15 V; VGS =0
IDSS
min.
20
5
2
mA
Total power dissipation
up to Tamb =50 °CPtot
max.
400
400
400
mW
Gate-source cut-off voltage
min.
max.
3
10
1
5
0.5
3
V
V
VDS = 5 V; ID =1 µA
−VGS off
Drain-source on-state resistance
VDS = 0.1 V; VGS =0
RDS on
max.
30
50
100
Ω



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