July 1993

3

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

J111; J112; J113

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

STATIC CHARACTERISTICS

Drain-source voltage

max.

40 V

Gate-source voltage

−V

GSO

max.

40 V

Gate-drain voltage

−V

GDO

max.

40 V

Gate forward current (DC)

max.

50 mA

Total power dissipation

max.

400 mW

Storage temperature range

−65 to + 150 °C

Junction temperature

max.

150

°C

From junction to ambient in free air

=

250 K/W

J111

J112

J113

Gate reverse current

max.

1

1

1

nA

Drain cut-off current

max.

1

1

1

nA

Drain saturation current

min.

20

5

2

mA

Gate-source breakdown voltage

−I

min.

40

40

40

V

Gate-source cut-off voltage

min.

3

1

0.5

V

max.

10

5

3

V

Drain-source on-state resistance

max.

30

50

100

Ω