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J211 Datasheet(PDF) 8 Page - NXP Semiconductors |
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J211 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 12 page  1997 Dec 01 8 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212 Fig.14 Drain current as a function of gate-source voltage; typical values. VDS = 15 V; Tj =25 °C. handbook, halfpage 0 −2 −1 −3 −4 MGM289 10−5 102 103 10 1 10−1 10−2 10−3 10−4 ID ( µA) VGS (V) Fig.15 Gate current as a function of drain-gate voltage; typical values. Tj =25 °C. handbook, halfpage 20 16 812 4 0 MGM288 −10−1 −104 −105 −103 −102 −10 −1 IG (pA) VDG (V) ID = 10 mA 1 mA 0.1 mA IGSS |
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