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BSS84 Datasheet(PDF) 1 Page - Diodes Incorporated |
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BSS84 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 3 page  DS30149 Rev. 11 - 2 1 of 3 BSS84 www.diodes.com ã Diodes Incorporated eristic Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS £ 20KW VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 1) Continuous ID -130 mA Total Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient RqJA 417 °C/W Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C · Case: SOT-23 · Case Material: UL Flammability Classification Rating 94V-0 · Moisture sensitivity: Level 1 per J-STD-020C · Terminals: Solderable per MIL-STD-202, Method 208 · Lead Free Plating (Matte Tin Finish). · Terminal Connections: See Diagram · Marking (See Page 2): K84 · Ordering & Date Code Information: See Page 2 · Weight: 0.008 grams (approximate) Mechanical Data A E J L TOP VIEW M B C H G D K D G S Electrical Characteristics @ TA = 25 °C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage BVDSS -50 ¾¾ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25 °C VDS = -50V, VGS = 0V, TJ = 125 °C VDS = -25V, VGS = 0V, TJ = 25 °C Gate-Body Leakage IGSS ¾¾ ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) -0.8 ¾ -2.0 V VDS =VGS, ID = -1mA Static Drain-Source On-Resistance RDS (ON) ¾¾ 10 W VGS = -5V, ID = -0.100A Forward Transconductance gFS 0.05 ¾¾ S VDS = -25V, ID = -0.1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ¾¾ 45 pF VDS = -25V, VGS = 0V f = 1.0MHz Output Capacitance Coss ¾¾ 25 pF Reverse Transfer Capacitance Crss ¾¾ 12 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) ¾ 10 ¾ ns VDD = -30V, ID = -0.27A, RGEN = 50 W, VGS = -10V Turn-Off Delay Time tD(OFF) ¾ 18 ¾ ns Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. Source Gate Drain SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 ° 8 ° All Dimensions in mm Maximum Ratings @ TA = 25 °C unless otherwise specified BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · Low On-Resistance · Low Gate Threshold Voltage · Low Input Capacitance · Fast Switching Speed · Low Input/Output Leakage · Lead Free/RoHS Compliant (Note 3) · Qualified to AEC-Q101 Standards for High Reliability Lead-free SPICE MODEL: BSS84 |
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