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KMZ50 Datasheet(PDF) 2 Page - NXP Semiconductors |
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KMZ50 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1998 Mar 24 2 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50 FEATURES • High sensitivity • Integrated set/reset coil. APPLICATIONS • Navigation • Current and earth magnetic field measurement • Traffic detection. DESCRIPTION The KMZ50 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains one magnetoresistive Wheatstone bridge and integrated set/reset conductors. With the integrated set/reset conductor the orientation of sensitivity may be set or changed (flipped). A short current pulse on this conductor is needed to recover (set) the sensor after exposure to strong disturbing magnetic fields. A negative current pulse will reset the sensor to reversed sensitivity. By use of periodically alternated flipping pulses and a lock-in amplifier, output will become independent of sensor and amplifier offset. PINNING PIN SYMBOL DESCRIPTION 1 +Iflip flip coil 2VCC bridge supply voltage 3 GND ground 4 n.c. not connected 5 n.c. not connected 6 −V O bridge output voltage 7+VO bridge output voltage 8 −I flip flip coil Fig.1 Simplified outline. handbook, halfpage 4 1 5 8 MGD791 pin 1 index H QUICK REFERENCE DATA Note 1. Average power consumption in flip conductor, defined by current, pulse duration and pulse repetition rate may not exceed the specified limit, see “Limiting values”. SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC bridge supply voltage − 58V S sensitivity (uncompensated) 12 16 − Voffset offset voltage −1.5 − +1.5 mV/V Rbridge bridge resistance 1 − 3k Ω Rflip flip coil resistance 1 3 5 Ω Iflip (min) minimum recommended flipping current; note 1 800 1000 1200 mA tflip (min) minimum flip pulse duration; note 1 1 3 100 µs mV V ⁄ kA m ⁄ ----------------- |
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