1998 Mar 24

3

Philips Semiconductors

Preliminary specification

Magnetic field sensor

KMZ50

CIRCUIT DIAGRAM

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

bridge supply voltage

−

9V

total power dissipation

−

130

mW

storage temperature

−65

+150

°C

bridge operating temperature

−40

+125

°C

maximum flipping current

−

1500

mA

maximum flipping power dissipation

−

50

mW

voltage between isolated systems:

flip conductor - Wheatstone bridge

−

60

V

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient

155

K/W

Fig.2 Simplified circuit diagram.

handbook, halfpage

87

6

5

12

3

4

MGD792

GND

+VO

+IF

−IF

−VO

VCC

n.c.

n.c.

Z1