FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Logic-level gate drive

•RDS(on) specified at VGS = 4 V and 5 V

• Fast switching

• Material categorization: for definitions of compliance

DESCRIPTION



The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 1.5 A (see fig. 12).

c. ISD  5.6 A, dI/dt  75 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 10

Continuous Drain Current

VGS at 5.0 V

TC = 25 °C

ID

1.5

A

TC = 100 °C

0.93

Pulsed Drain Current a

IDM

12

Linear Derating Factor

0.025

W/°C

Linear Derating Factor (PCB Mount) e

0.017

Single Pulse Avalanche Energy b

EAS

50

mJ

Repetitive Avalanche Current a

IAR

1.5

A

Repetitive Avalanche Energy a

EAR

0.31

mJ

Maximum Power Dissipation

TC = 25 °C

PD

3.1

W

Maximum Power Dissipation (PCB Mount) e

TA = 25 °C

2.0

Peak Diode Recovery dV/dt c

dV/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Soldering Recommendations (Peak Temperature) d

for 10 s

300

UMW

IRLL110

R

100V N-Channel MOSFET

VDS(V) = 100V

RDS(ON) < 54mΩ (V GS = 5V)

RDS(ON) < 76mΩ (V GS = 4V)

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1

UTD Semiconductor Co.,Limited