LLE18150X datasheet(4/9 Pages) PHILIPS

4 / 9 page

September 1994

Philips Semiconductors

Product speciﬁcation

NPN silicon planar epitaxial

microwave power transistor

LLE18150X

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tmb = 25 °C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting base

Tj = 100 °C

3.6

K/W

Rth mb-h

thermal resistance from mounting base to heatsink

0.2

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−

1.5

V(BR)CER

collector-emitter breakdown voltage IC = 0 mA; RBE = 220 Ω

−

V(BR)CBO

collector-base breakdown voltage

IC =10mA

−

V(BR)EBO

emitter-base breakdown voltage

IE =10mA

−

hFE

DC current gain

IC = 0.5 A; VCE = 3 V

100

MODE OF

OPERATION

(GHz)

VCE

(V)

ICQ

(A)

PL1

(W)

Gpo

(dB)

ηC

(%)

Zi; ZL

(

Ω)

Class AB (CW)

1.85

0.05

≥12

typ. 15

≥7.8

typ. 8.5

typ. 43

see Figs 6

and 7

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