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AM29LV065MU101REF Datasheet(PDF) 47 Page - Advanced Micro Devices

Part # AM29LV065MU101REF
Description  64 Megabit (8 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  62 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV065MU101REF Datasheet(HTML) 47 Page - Advanced Micro Devices

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September 12, 2006
Am29LV065MU
45
DA TA
SH EET
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1.
Not 100% tested.
2.
See the “Erase And Programming Performance” section for more
information.
3.
For 1–32 bytes programmed.
4.
Effective write buffer specification is based upon a 32-byte write
buffer operation.
5.
five Byte programming specification is based upon a single byte
programming operation not utilizing the write buffer.
6.
AC specifications listed are tested with V
IO = VCC. Contact AMD for
information on AC operation with V
IO ≠ VCC.
7.
When using the program suspend/resume feature, if the suspend
command is issued within t
POLL, tPOLL must be fully re-applied upon
resuming the programming operation. If the suspend command is
issued after t
POLL, tPOLL is not required again prior to reading the
status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Note 2), (Note 3)
Typ
352
µs
Effective Byte Program Time, using the Write Buffer (Note 2), (Note 4)
Typ
11
µs
Effective Accelerated Byte Program Time, using the Write Buffer (Notes
(Note 2), (Note 4)
Typ
8.8
µs
Single Byte Program Operation (Note 2), (Note 5)
Typ
100
µs
Accelerated Single Byte Programming Operation (Note 2), (Note 5)
Typ
90
µs
t
WHWH2
t
WHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC Setup Time (Note 1)
Min
50
µs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
WE# High to RY/BY# Low
Max
90
100
110
120
ns
t
POLL
Program Valid Before Status Polling (Note 7)
Max
4
µs



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