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LTE42012R Datasheet(PDF) 6 Page - NXP Semiconductors |
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LTE42012R Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() 1997 Feb 21 6 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R APPLICATION INFORMATION Microwave performance up to Tmb =25 °C in a common emitter class-A selective circuit; note 1. Note 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. MODE OF OPERATION f (GHz) VCE (V) IC (mA) PL1 (W) Gpo (dB) Zi ( Ω) ZL ( Ω) Class-A 4.2 16 400 >1 typ. 1.25 >6 typ. 7 7.5 + j12 4 − j8 Fig.4 Prematching test circuit board. Dimensions in mm. Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric ( εr = 2.54); thickness: 0.8 mm. handbook, full pagewidth ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, 6 2 6 2.2 2.5 2 2.5 1.5 1 5.5 8.5 30 11.3 6 12.8 6 11.2 30 2.5 MSA102 |
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