1997 Feb 21

3

Philips Semiconductors

Product specification

NPN microwave power transistor

LTE42012R

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

20

V

collector-emitter voltage

open base

−

16

V

collector current (DC)

−

800

mA

total power dissipation

−

8W

storage temperature

−65

+200

°C

operating junction temperature

−

200

°C

soldering temperature

at 0.1 mm from ceramic;

t

≤ 10 s

−

235

°C

(1) Region of permissible DC operation.

Fig.2 DC SOAR.

handbook, halfpage

1

MGL006

IC

(A)

VCE (V)

(1)

(2)

Fig.3

Power derating curve.

handbook,

0

50

100

200

10

0

8

150

6

4

2

MGD973

Ptot

(W)

Tmb (°C)