Maximum DC Blocking Voltage

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Maximum Average Forward Rectified Current

Typical Junction Capacitance

20

40

V

14

28

V

V

1.0

30

0.3

10

95

-55 ~ +150

A

A

V

mA

pF

°C

Typical Thermal Resistance

°C/W

Units

Absolute Maximum Ratings and Electrical characteristics

Ratings at

ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,

for capacitive load, derate by 20 %

25

°C

20

40

Peak Forward Surge Current,8.3ms

Single Half Sine-wave Superimposed

on Rated Load (JEDEC method)

Max Instantaneous Forward Voltage at 1 A

Maximum DC Reverse Current

at Rated DC Reverse Voltage

Operating Junction Temperature Range

SS12F

SS14F

SS16F

SS18F

SS110F

SS112F

SS115F

SS120F

T = 25

°C

a

T =100

°C

a

VRRM

VRMS

VDC

IF(AV)

IFSM

VF

IR

RθJA

Cj

Tj

Symbols

Tstg

Storage Temperature Range

60

42

60

80

56

80

100

70

100

0.55

0.70

0.85

110

-55 ~ +150

°C

120

84

120

150

105

150

200

140

200

0.90

0.2

5

0.1

2

80

40

FEATURES

Metal silicon junction, majority carrier conduction

For surface mounted applications

Low power loss, high efficiency

High forward surge current capability

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

MECHANICAL DATA

• Case: SMAF

• Terminals: Solderable per MIL-STD-750, Method 2026

• A

27mg

0 00095oz

pprox. Weight:

/

.

（2）

（1）

Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）

（1）

P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

•

•

•

•

•

•

UMW SS12F THRU SS120F

20V-200V 1A

UMW

R

R

R

R

www.umw-ic.com

1

友台半导体有限公司

友台半导体有限公司