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SS32F Datasheet(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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SS32F Datasheet(HTML) 1 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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1 / 3 page ![]() Parameter Symbols SS32F SS34 F SS36F SS38F SS310F SS312F SS315F SS320F Units Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current IF(AV) 3.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) IFSM 80 70 A Max Instantaneous Forward Voltage at 3 A VF 0.55 0.70 0.85 0.95 V 0.5 0.3 5 3 250 180 (2) Typical Thermal Resistance 70 °C/W Operating Junction Temperature Range -55 ~ +150 °C Storage Temperature Range Tstg -55 ~ +150 °C Ta = 25 °C Ta =100 °C IR Cj mA pF RθJA Tj Maximum DC Reverse Current at Rated DC Reverse Voltage Typical Junction Capacitance (1) Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • 27mg / 0.00095oz Approx. Weight: Measured at 1 MHz and applied reverse voltage of 4 V D.C (2) (1) P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. • • • • • • UMW SS32F THRU SS320F 20V-200V 3A UMW R R www.umw-ic.com 1 友台半导体有限公司 友台半导体有限公司 |
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