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AM29LV320MH101REF Datasheet(PDF) 45 Page - Advanced Micro Devices

Part # AM29LV320MH101REF
Description  32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  59 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV320MH101REF Datasheet(HTML) 45 Page - Advanced Micro Devices

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January 31, 2007 26517B4
Am29LV320MH/L
43
D A TA
SH EET
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1.
Not 100% tested.
2.
See the “Erase And Programming Performance” section for more
information.
3.
For 1–16 words/1–32 bytes programmed.
4.
Effective write buffer specification is based upon a
16-word/32-byte write buffer operation.
5.
Word/Byte programming specification is based upon a single
word/byte programming operation not utilizing the write buffer.
6.
AC specifications listed are tested with VIO = VCC. Contact AMD
for information on AC operation with VIO ≠ VCC.
7.
When using the program suspend/resume feature, if the suspend
command is issued within tPOLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend
command is issued after t
POLL, tPOLL is not required again prior to
reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Byte
Typ
7.5
µs
Per Word
Typ
15
µs
Accelerated Effective Write Buffer Program
Operation (Notes 2, 5)
Per Byte
Typ
6.25
µs
Per Word
Typ
12.5
µs
Single Word/Byte Program Operation
(Notes 2, 5)
Byte
Typ
60
µs
Word
60
Accelerated Single Word/Byte
Programming Operation (Note 2)
Byte
Typ
54
µs
Word
54
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC Setup Time (Note 1)
Min
50
µs
t
BUSY
WE# to RY/BY#
Max
90
100
110
120
ns
t
POLL
Program Valid Before Status Polling
(Note 7)
Max
4
µs



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