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AM29LV320MH101REF Datasheet(PDF) 54 Page - Advanced Micro Devices

Part # AM29LV320MH101REF
Description  32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  59 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV320MH101REF Datasheet(HTML) 54 Page - Advanced Micro Devices

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52
Am29LV320MH/L
26517B4 January 31, 2007
D A TA
SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, Programming specification assume that
all bits are programmed to 00h.
2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
13 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
32
64
sec
Single Word/Byte Program Time (Note 3)
60
600
µs
Excludes system level
overhead (Note 7)
Accelerated Single Word/Byte Program Time (Note 3)
54
540
µs
Total Write Buffer Program Time (Note 4)
240
1200
µs
Effective Write Buffer Program Time (Note 5)
Per Byte
7.5
38
µs
Per Word
15
75
µs
Total Accelerated Write Buffer Program Time (Note 4)
200
1040
µs
Effective Accelerated Write Buffer Program Time
(Note 5)
Per Byte
6.25
33
µs
Per Word
12.5
65
µs
Chip Program Time
31.5
73
sec
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA



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