Electrical Characteristics (T

A = 25

O

C unless otherwise noted )

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = 250 µA

30

V

∆BV

DSS/∆TJ

Breakdown Voltage Temp. Coefficient

I

D = 250 µA, Referenced to 25

oC

41

mV/

oC

I

DSS

Zero Gate Voltage Drain Current

V

DS = 24 V, VGS = 0 V

1

µA

T

J = 55°C

10

µA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 8 V,VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -8 V, VDS = 0 V

-100

nA

ON CHARACTERISTICS (Note)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = 250 µA

0.4

0.7

1

V

∆V

GS(th)/∆TJ

Gate Threshold Voltage Temp. Coefficient

I

D = 250 µA, Referenced to 25

oC

-2.3

mV/

oC

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = 4.5 V, ID = 2.2 A

54

65

Ω

V

GS = 2.5 V, ID = 2 A

70

82

I

D(ON)

On-State Drain Current

V

GS = 4.5 V, VDS = 5 V

10

A

g

FS

Forward Transconductance

V

DS = 5 V, ID = 2.2 A

13

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = 10 V, VGS = 0 V,

f = 1.0 MHz

300

pF

C

oss

Output Capacitance

145

pF

C

rss

Reverse Transfer Capacitance

35

pF

SWITCHING CHARACTERISTICS (Note)

t

D(on)

Turn - On Delay Time

V

DD = 5 V, ID = 1 A,

V

GS = 4.5 V, RGEN = 6 Ω

4

10

ns

t

r

Turn - On Rise Time

10

18

ns

t

D(off)

Turn - Off Delay Time

17

28

ns

t

f

Turn - Off Fall Time

4

10

ns

Q

g

Total Gate Charge

V

DS = 10 V, ID = 2.2 A,

V

GS = 4.5 V

7

9

nC

Q

gs

Gate-Source Charge

1.1

nC

Q

gd

Gate-Drain Charge

1.9

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current

0.42

A

V

SD

Drain-Source Diode Forward Voltage

V

GS = 0 V, IS = 0.42 A (Note)

0.65

1.2

V

Note:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment :

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

a. 250

oC/W when mounted on

0.02 in

2 pad of 2oz Cu.

b. 270

oC/W when mounted on

a 0.001 in

2 pad of 2oz Cu.

N-Channel 30 V (D-S) MOSFET

UMW

R

FDN337

www.umw-ic.com

2

UTD Semiconductor Co.,Limited

m