0

2

4

6

8

0

1

2

3

4

5

Q

, GATE CHARGE (nC)

g

I = 2.2A

D

15V

V

= 5V

DS

10V

0.1

0.5

1

2

5

10

20

50

0.01

0.03

0.1

0.3

1

2

5

10

20

V

, DRAI N-SOURCE VOLTAGE (V)

DS

DC

1s

100ms

10s

1ms

RDS(ON)

LIMIT

V

= 4.5V

SINGLE PULSE

R

=250 °C/W

T = 25°C

GS

A

θJA

10ms

0.0001

0.001

0.01

0.1

1

10

100 300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=270° C/W

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1b.

Transient thermal response will change depending on the circuit board design.

0.1

0.2

0.5

1

2

5

10

20

20

50

100

200

500

1000

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0V

GS

Coss

Crss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical Characteristics (continued)

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

R

(t) = r(t) * R

R

= 270 °C/W

Duty Cycle, D = t /t

1

2

θJA

θJA

θJA

T - T

= P * R

(t)

θJA

A

J

P(pk)

t1

t 2

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

N-Channel 30 V (D-S) MOSFET

UMW

R

FDN337

www.umw-ic.com

4

UTD Semiconductor Co.,Limited