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ISG2037 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2037
Description  Trench Field-Stop Technology IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2037 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2037 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2037 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2037 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2037
eq IRG7PK35UD1
Trench Field-Stop Technology IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case for IGBT
0.49
℃
/W
Rth j-c
Thermal Resistance,Junction to Case for Diode
0.62
℃
/W
STATIC CHARACTERISTICS（TC= 25 °C unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage VGE=0, IC= 0.5mA
1300
-
-
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE, IC=1mA
5.1
-
6.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 40A, VCE= 15V
--
1.8
2.1
V
ICES
Zero Gate Voltage Collector Current
VCE= 1200V, VGE=0
--
--
0.1
mA
IGES
Gate-Emitter Leakage Current
VGE=±20V, VCE=0
--
--
±
100
nA
DYNAMIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
3819
--
pF
Coes
Output Capacitance
--
184
--
Cres
Reverse Transfer Capacitance
--
40
--
Qg
Total Gate Charge
VGE = 15V,
IC= 40A,
VCC = 960V
--
173
--
nC
Qge
Gate-Emitter Charge
--
35
--
Qgc
Gate-Collector Charge
--
87
--



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