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IRF8313 Datasheet(PDF) 3 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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IRF8313 Datasheet(HTML) 3 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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3 / 6 page ![]() 0 2 4 6 8 10 12 0 0.25 0.5 0.75 1 VDS , Drain-to-Source Voltage (V) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 10 14 18 22 2 4 6 8 10 VGS (V) ID=12A 0 2 4 6 8 10 12 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) TJ=150℃ TJ=25℃ 0 2 4 6 8 10 0 7 . 5 15 22.5 30 ID= 1 2 A 0 0.5 1 1.5 -50 25 100 175 TJ ,Junction Temperature ( ℃) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 30V 2N-Channel Enhancement Mode MOSFET UMW R IRF8313 QG , T o t a l G a t e C h a r g e ( n C ) |
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