IRF8313 datasheet(1/6 Pages) UMW

Part #	IRF8313

Description	30V 2N-Channel Enhancement Mode MOSFET

PDF	6 Pages

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Manufacturer	UMW [Guangdong Youtai Semiconductor Co., Ltd.]

Direct Link	https://www.umw-ic.com/

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1 / 6 page

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

9

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

8.2

A

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

6.5

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

5.6

A

IDM

Pulsed Drain Current2

30

A

EAS

Single Pulse Avalanche Energy3

15

mJ

IAS

Avalanche Current

22

A

PD@TC=25℃

Total Power Dissipation4

1.6

W

PD@TA=70℃

Total Power Dissipation4

1.0

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

75

℃

/W

RθJC

Thermal Resistance Junction-Case1

4.8

℃

/W

30V 2N-Channel Enhancement Mode MOSFET

General Description

The

is the highest performance trench

N-ch MOSFETs with extreme high cell density,

which provide excellent RDSON and gate charge

for most of the small power switching and

load switch applications. The meet the RoHS and

Product requirement with full function reliability approved.

General Features

VDS = 30V ID =

RDS(ON) <

mΩ @ VGS=10 V

RDS(ON) < 18mΩ @ VGS=4.5V

Application

Battery protection

Load switch

Uninterruptible power supply

9A

13

IRF8313TR

UMW R

IRF8313

www.umw-ic.com

1

UTD Semiconductor Co.,Limited

D1

D2

G1

S2

G2

S1

8

1

2

3

4

5

6

7

SOP-8

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IRF8313 Datasheet(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

IRF8313 Datasheet(HTML) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

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