SFH 7018B

DATASHEET

DATASHEET

5 | Version 1.0 | 2023-11-09

Characteristics

I

F = 20 mA; tp = 20 ms; TS = 25 °C

Parameter

Symbol

Values

Values

Values

● true green

● hyper red

● infrared

(940 nm)

Peak wavelength

λ

peak

typ.

526.0 nm

660.0 nm

950.0 nm

Centroid wavelength 4)

λ

centroid

min.

typ.

max.

520.0 nm

530.0 nm

540.0 nm

652.5 nm

655.0 nm

657.5 nm

930.0 nm

940.0 nm

950.0 nm

Spectral bandwidth at 50% I

rel,max

(FWHM)

∆λ

typ.

27.0 nm

23.0 nm

41.0 nm

Half angle

φ

typ.

60 °

60 °

60 °

Dimensions of active chip area

L x W

typ.

0.75 x 0.75

mm x mm

0.3 x 0.3

mm x mm

0.3 x 0.3

mm x mm

Rise time (10% / 90%)

I

F = 100 mA; RL = 50 Ω

t

r

typ.

59 ns

17 ns

16 ns

Fall time (10% / 90%)

I

F = 100 mA; RL = 50 Ω

t

f

typ.

59 ns

17 ns

16 ns

Forward voltage 5)

V

F

min.

typ.

max.

2.10 V

2.35 V

2.60 V

1.70 V

1.90 V

2.20 V

1.10 V

1.30 V

1.50 V

Forward voltage

I

F= 100 mA

V

F

typ.

2.70 V

Forward voltage

I

F= 200 mA

V

F

typ.

3.05 V

Forward voltage

I

F= 250 mA

V

F

typ.

3.20 V

Reverse current 3)

V

R = 5 V

I

R

typ.

max.

0.01 µA

10 µA

0.01 µA

10 µA

0.01 µA

10 µA

Radiant intensity 1)2)

I

F = 20 mA; tp = 20 ms

I

e

min.

typ.

max.

7.5 mW/sr

8.5 mW/sr

9.4 mW/sr

5.5 mW/sr

6.2 mW/sr

7.3 mW/sr

3.7 mW/sr

4.4 mW/sr

5.1 mW/sr

Total radiant flux 6)

I

F = 20 mA; tp = 20 ms

Φ

e

typ.

27 mW

20 mW

14 mW

Temperature coefficient of brightness TC

I

typ.

-0.3 % / K

Temperature coefficient of wave-

length

TC

λ

typ.

0.3 nm / K

Thermal resistance junction solder

point real 7)

R

thJS real

typ.

max.

57 K / W

69 K / W

45 K / W

54 K / W

50 K / W

62 K / W

The stated characteristic values refer to one chip, unless otherwise specified.