LCP152 datasheet(3/11 Pages) STMICROELECTRONICS

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LCP1521S/LCP152DEE

Characteristics

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Table 3.

Electrical characteristics (Tamb = 25° C)

Symbol

Parameter

IGT

Gate triggering current

Holding current

IRM

Reverse leakage current LINE / GND

IRG

Reverse leakage current GATE / LINE

VRM

Reverse voltage LINE / GND

VGT

Gate triggering voltage

Forward drop voltage LINE / GND

VFP

Peak forward voltage LINE / GND

VDGL

Dynamic switching voltage GATE / LINE

VRG

Reverse voltage GATE / LINE

Capacitance LINE / GND

Table 4.

Absolute ratings (Tamb = 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

IPP

Peak pulse current

10/1000 µs

8/20 µs

10/560 µs

5/310 µs

10/160 µs

1/20 µs

2/10 µs

100

150

ITSM

Non repetitive surge peak on-state current

(50Hz sinusoidal)

t = 20 ms

t = 200 ms

t = 1 s

IGSM

Maximum gate current (50Hz sinusoidal)

t = 10 ms

VMLG

VMGL

Maximum voltage LINE/GND

Maximum voltage GATE/LINE

-40° C < Tamb < +85° C

-150

Tstg

Storage temperature range

Maximum junction temperature

-55 to +150

150

° C

Maximum lead temperature for soldering during 10 s.

260

° C

Table 5.

Repetitive peak pulse current

Symbol

Definition

Example

Rise time (µs)

Pulse waveform

10/1000 µs:

tr = 10 µs

tp = 1000 µs

Pulse duration (µs)

VRM

IPP

IRM

100

%IPP

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