LCP152 datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

LCP1521S/LCP152DEE

4/11

Table 6.

Parameters related to the diode LINE / GND (Tamb = 25° C)

Symbol

Test conditions

Max

Unit

IF = 5A

t = 500 µs

VFP

(1)

See test circuit for VFP (Figure 4.): RS is the protection resistor located on the line card.

10/700 µs

1.2/50 µs

2/10 µs

1.5 kV

2.5 kV

RS = 10 Ω

RS = 62 Ω

Table 7.

Parameters related to the protection Thyristors (Tamb = 25° C, unless

otherwise specified)

Symbol

Test conditions

Typ

Max

Unit

IGT

VGND / LINE = -48 V

0.1

VGATE = -48 V

(1)

see functional holding current (IH) test circuit

150

VGT

at IGT

2.5

IRG

VRG = -150 V

Tj = 25° C

Tj = 85° C

µA

VDGL

VGATE = -48 V

(2)

see test circuit for VDG The oscillations with a time duration lower than 50ns are not taken into account.

10/700 µs

1.2/50 µs

2/10 µs

1.5 kV

2.5 kV

RS = 10 Ω

RS = 62 Ω

IPP = 30 A

IPP = 38 A

Table 8.

Parameters related to diode and protection Thyristors (Tamb = 25° C,

unless otherwise specified)

Symbol

Test conditions

Typ

Max

Unit

IRM

VGATE / LINE = -1 V

VRM = -150 V

VGATE / LINE = -1 V

VRM = -150 V

Tj = 25° C

Tj = 85° C

µA

VR = 50 V bias, VRMS = 1 V, F = 1 MHz

VR = 2 V bias, VRMS = 1 V, F = 1 MHz

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