QPA2040DEVB01 datasheet(2/23 Pages) QORVO

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Qorvo® Confidential & Proprietary Information

QPA2040D

20 – 40 GHz 2 Watt GaN Power Amplifier

Data Sheet Rev. A, March 2023

2 of 23

www.qorvo.com

Absolute Maximum Ratings

Parameter

Value / Range

Drain Voltage (VD)

29.5 V

Gate Voltage Range (VG)

−5 V to 0 V

Drain Current (ID1)

160 mA

Drain Current (ID2)

300 mA

Drain Current (ID3)

590 mA

Gate Current (IG)

See plot pg. 18

Power Dissipation (PDISS), 85 °C

Input Power (PIN

), 50 Ω,

VD=18 V, IDQ = 462 mA, 85 °C

27 dBm

Input Power (PIN), 3:1 VSWR,

VD=18 V, IDQ = 462 mA, 85 °C

27 dBm

Soldering Temperature (30 s max.)

320 °C

Storage Temperature

−55 to +150 °C

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions

is not implied.

Recommended Operating Conditions

Parameter

Value / Range

Drain Voltage (VD)

18 V

Drain Current (IDQ)

462 mA

Operating Temperature

−40 to +85 °C

Electrical

specifications

are

measured

specified

test

conditions.

Specifications

are

not

guaranteed

over

all

recommended operating conditions.

Electrical Specifications

Parameter

Min

Typ

Max

Units

Operational Frequency

GHz

Output Power (PIN=21 dBm)

33.5

dBm

Power Added Efficiency (PIN=21 dBm)

13.0

Small Signal Gain

24.3

Input Return Loss

Output Return Loss

POUT

Temp. Coeff. (85 °C to −40 °C, PIN = 21 dBm)

−0.009

dB/°C

Sm. Sig. Gain Temp. Coefficient (85 °C to

−40 °C)

−0.073

dB/°C

Test conditions, unless otherwise noted: T = +25 °C, VD = 18 V, IDQ = 462 mA

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