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BUV21 Datasheet(PDF) 1 Page - ON Semiconductor |
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BUV21 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 4 page ![]() © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 10 1 Publication Order Number: BUV21/D BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO(SUS) 200 Vdc Collector−Base Voltage VCBO 250 Vdc Emitter−Base Voltage VEBO 7 Vdc Collector−Emitter Voltage (VBE = −1.5 V) VCEX 250 Vdc Collector−Emitter Voltage (RBE = 100 W) VCER 240 Vdc Collector−Current − Continuous − Peak (PW v 10 ms) IC ICM 40 50 Adc Apk Base−Current Continuous IB 8 Adc Total Device Dissipation @ TC = 25_C PD 250 W Operating and Storage Junction Temperature Range TJ, Tstg −65 to 200 _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 0.7 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS http://onsemi.com MARKING DIAGRAM Device Package Shipping ORDERING INFORMATION BUV21 TO−204 100 Units / Tray BUV21G TO−204 (Pb−Free) 100 Units / Tray BUV21G AYWW MEX TO−204AE (TO−3) CASE 197A BUV21 = Device Code G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin |
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