ZLLS2000

SEMICO NDUC TORS

ISSUE 4 - APRIL 2007

2

PARAMETER

SYMBOL

VALUE

UNIT

Schottky Diode

Continuous reverse voltage

V

R

40

V

Forward current

I

F

2.2

A

Peak repetitive forward current

Rectangular pulse duty cycle

I

FPK

3.55

A

Non repetitive forward current

t=

100 s

t=

10ms

I

FSM

36

12

A

A

Package

Power dissipation at T

single die continuous

single die measured at t<5 secs

P

D

1.1

1.71

W

W

Storage temperature range

T

stg

-55 to +150

C

Junction temperature

Tj

150

C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient (a)

R

JA

113

°C/W

Junction to ambient (b)

R

JA

73

°C/W

THERMAL RESISTANCE

Notes

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions.

(b) For a device surface mounted on FR4 PCB measured at t<5secs.