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2SC5658M Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd .

Part # 2SC5658M
Description  Plastic-Encapsulate Transistors
PDF  3 Pages
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Manufacturer  GWSEMI [Goodwork Semiconductor Co., Ltd .]
Direct Link  http://www.goodwork.com.tw/
Logo GWSEMI - Goodwork Semiconductor Co., Ltd .

2SC5658M Datasheet(HTML) 1 Page - Goodwork Semiconductor Co., Ltd .

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SOT-723
1
. BASE
2
. EMITTER
3. COLLECTOR
FEATURES
Low Cob
Complements the 2SA2029
Marking: BQ,BR,BS
Absolute maximum ratings (Ta=25 unless otherwise noted)
Symbol
Parameter
Limit
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
150
mA
PC
Collector Dissipation
100
mW
Operation Junction and Storage Temperature Range
℃
TJ,Tstg
-55~+150
Electrical characteristics (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
0.1
μA
DC current transfer ratio
hFE
VCE=6V,IC=1mA
120
560
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB=5mA
0.4
V
Transition frequency
fT
VCE=12V,IC=2mA, f=100MHz
180
MHz
Output capacitance
Cob
VCB=12V,IE=0, f=1MHz
3.5
pF
Classification of hFE
Rank
Q
R
S
Range
120~270
180~390
270~560
℃
Plastic-Encapsulate Transistors
2SC5658M-SERIES
GENERAL PURPOSE TRANSISTORS(NPN)


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