FBA7002K datasheet(2/4 Pages) GWSEMI

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MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Type

Max

Unit

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =60V,VGS = 0V

100

Gate-body leakage current

IGSS

VGS =±20V, VDS = 0V

±10

µA

VGS =±5V, VDS = 0V

±1

Gate threshold voltage

VGS(th)

VDS =VGS, ID =250µA

1.3

1.4

2.3

Drain-source on-resistancea

RDS(on)

VGS =10V, ID =40mA

1.2

1.5

Ω

VGS =4.5V, ID =35mA

1.3

1.8

Forward tranconductancea

gfs

VDS = 5V, ID = 40mA

100

Diode forward voltage

VSD

VGS =0V, IS =300mA

0.84

1.1

Dynamic characteristics

Input Capacitanceb

Ciss

VDS =40V,VGS =0V,f =1MHz

Output Capacitanceb

Coss

3.6

Reverse Transfer Capacitanceb

Crss

2.9

5.6

Gate resistance

VDS = 0V, VGS = 0V, f = 1MHz

200

Ω

Total Gate Charge

VGS =4.5V

VDS = 50V,

ID = 0.41A

0.72

1.5

VGS =10V

1.41

2.8

Gate-Source Charge

Qgs

0.24

0.4

Gate-Drain Charge

Qgd

0.24

0.5

Turn-on delay timeb

td(on)

VDS=30V,RL=50R,

VGS=10V,RG=6Ω

3.98

Turn-on rise timeb

4.95

Turn-off delay timeb

td(off)

18.52

Turn-off fall timeb

11.94

Notes:

a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

b. These parameters have no way to verify.

FB A7002K

N-Channel MOSFET

FBA7002K Datasheet(PDF) 2 Page - Goodwork Semiconductor Co., Ltd .

FBA7002K Datasheet(HTML) 2 Page - Goodwork Semiconductor Co., Ltd .

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