STW9N150 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STW9N150

Description	N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 9 page

TARGET SPECIFICATION

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

May 2007

Rev 1

1/9

9

STW9N150

N-channel 1500V - 2.2

Ω - 8A - TO-247

Very high voltage PowerMESH™ Power MOSFET

General features

■ 100% avalanche tested

■ Avalanche ruggedness

■ Gate charge minimized

■ Very low intrinsic capacitances

■ High speed switching

■ Very low on-resistance

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, unrivalled gate charge and

switching characteristics.

Applications

■ Switching application

Internal schematic diagram

Type

VDSS

RDS(on)

ID

Pw

STW9N150

1500V

< 2.7

Ω

8A

350W

TO-247

www.st.com

Order code

Part number

Marking

Package

Packaging

STW9N150

W9N150V

TO-247

Tube

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STW9N150 Datasheet(PDF) 1 Page - STMicroelectronics

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