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STW9N150 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STW9N150
Description  N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW9N150 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STW9N150
4/9
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 750V, ID = 2A,
RG = 4.7Ω, VGS = 10V
(see Figure 1)
Tbd
Tbd
Tbd
Tbd
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
8
32
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 4A, VGS = 0
Tbd
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, di/dt = 100A/µs
VDD= 45V Tj = 25°C
(see Figure 3)
Tbd
Tbd
Tbd
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, di/dt = 100A/µs
VDD= 45V Tj = 150°C
(see Figure 3)
Tbd
Tbd
Tbd
ns
µC
A



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