W9N150V datasheet(3/9 Pages) STMICROELECTRONICS

Part #	W9N150V

Description	N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

3 / 9 page

STW9N150

Electrical characteristics

3/9

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS = 0

1500

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125°C

500

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 30V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250µA

RDS(on

Static drain-source on

resistance

VGS = 10V, ID = 1.3A

2.2

2.7

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 30V, ID = 2A

Tbd

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

3600

280

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20mV

open drain

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 600V, ID = 2.5A,

VGS = 10V

(see Figure 2)

Tbd

W9N150V Datasheet(PDF) 3 Page - STMicroelectronics

W9N150V Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL