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W9N150V Datasheet(PDF) 4 Page - STMicroelectronics |
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W9N150V Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Electrical characteristics STW9N150 4/9 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 750V, ID = 2A, RG = 4.7Ω, VGS = 10V (see Figure 1) Tbd Tbd Tbd Tbd ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 8 32 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 4A, VGS = 0 Tbd V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, di/dt = 100A/µs VDD= 45V Tj = 25°C (see Figure 3) Tbd Tbd Tbd ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, di/dt = 100A/µs VDD= 45V Tj = 150°C (see Figure 3) Tbd Tbd Tbd ns µC A |
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