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2N4398 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N4398
Description  Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N4398 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N4398 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N4398 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N4398 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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2N4398
Silicon PNP Power Transistor
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal Resistance,Junction to Ambient
35
℃
/W
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃
/W
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -50mA ; IB= 0
-40
--
--
V
ICEO
Collector Cutoff Current
VCE= -40V; IB= 0
--
--
-5.0
mA
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
--
--
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
--
--
-5.0
mA
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -10A; IB= -1A
--
--
-0.75
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -15A; IB= -1.5A
--
--
-1.0
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= -20A; IB= -2A
--
--
-2.0
V
VCE(sat)-4
Collector-Emitter Saturation Voltage
IC= -30A; IB= -6A
--
--
-4.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= -10A; IB= -1A
--
--
-1.6
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= -15A; IB= -1.5A
--
--
-1.85
V
VBE(sat)-3
Base-Emitter Saturation Voltage
IC= -20A; IB= -2A
--
--
-2.5
V
VBE(on)-1
Base-Emitter On Voltage
IC= -15A; VCE= -2V
--
--
-1.7
V
VBE(on)-2
Base-Emitter On Voltage
IC= -30A; VCE= -4V
--
--
-3.0
V
hFE-
DC Current Gain
IC= -1A; VCE= -10V
40
--
--
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V ;ftest=
1.0MHz
4
--
--
MHz



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