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2N4398 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N4398
Description  Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N4398 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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2N4398
Silicon PNP Power Transistor
www.iscsemi.com
1
DESCRIPTION
·
Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@ IC= -15A
·
Wide Area of Safe Operation
·
Complement to Type 2N5301
APPLICATIONS
·
Designed for use in power amplifier and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-30
A
ICM
Collector Current-Peak
-50
A
IB
Base Current-Continuous
-7.5
A
IBM
Base Current-Peak
-15
A
PC
Collector
Power
Dissipation@Ta=25℃
5
W
Collector
Power
Dissipation@TC=25℃
200
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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