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M29F800DT Datasheet(PDF) 21 Page - STMicroelectronics

Part # M29F800DT
Description  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
PDF  53 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29F800DT Datasheet(HTML) 21 Page - STMicroelectronics

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M29F800DT
Command Interface
21/53
Table 5.
Commands, 8-bit mode, BYTE = VIL
(1)
Command
Bus Write operations
1st
2nd
3rd
4th
5th
6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset
1X
F0
3
AAA
AA
555
55
X
F0
Auto Select
3
AAA
AA
555
55
AAA
90
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read CFI Query
1
AA
98
1.
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-
DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
Table 6.
Program, Erase times and Program, Erase Endurance cycles
Parameter
Min
Typ(1)(2)
Max(2)
Unit
Chip Erase
12
60(3)
s
Block Erase (64 Kbytes)
0.8
6(4)
s
Erase Suspend Latency time
30
µs
Program (Byte or Word)
10
200(3)
µs
Chip Program (Byte by Byte)
12
60(3)
s
Chip Program (Word by Word)
6
30(3)
s
Program/Erase cycles (per Block)
100,000
cycles
Data Retention
20
years
1.
Typical values measured at room temperature and nominal voltages.
2.
Sampled, but not 100% tested.
3.
Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4.
Maximum value measured at worst case conditions for both temperature and VCC.



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