PHP206 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1998 Feb 05

Philips Semiconductors

Objective speciﬁcation

Dual P-channel enhancement mode

MOS transistor

PHP206

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per P-channel

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = −10 µA

−30

−−

VGSth

gate-source threshold voltage

VGS =VDS; ID = −1mA

−1

−−

IDSS

drain-source leakage current

VGS = 0; VDS = −24 V

−−−100

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−±100

RDSon

drain-source on-state resistance

VGS = −4.5 V; ID = −2.8 A

−−

100

Ω

VGS = −10 V; ID = −5.6 A

−−

Ω

Ciss

input capacitance

VGS = 0; VDS = −24 V; f = 1 MHz

−

tbf

−

Coss

output capacitance

VGS = 0; VDS = −24 V; f = 1 MHz

−

tbf

−

Crss

reverse transfer capacitance

VGS = 0; VDS = −24 V; f = 1 MHz

−

tbf

−

total gate charge

VGS = −10 V; VDD = −15 V;

ID = −1 A; Tamb =25 °C

−

tbf

−

QGS

gate-source charge

VDD = −15 V; ID = −1A;

Tamb =25 °C

−

tbf

−

QGD

gate-drain charge

VDD = −15 V; ID = −1A;

Tamb =25 °C

−

tbf

−

Switching times

td(on)

turn-on delay time

VGS =0to −10 V; VDD = −20 V;

ID = −1 A; Rgen =6 Ω

−

tbf

−

fall time

VGS =0to −10 V; VDD = −20 V;

ID = −1 A; Rgen =6 Ω

−

tbf

−

ton

turn-on switching time

VGS =0to −10 V; VDD = −20 V;

ID = −1 A; Rgen =6 Ω

−

tbf

−

td(off)

turn-off delay time

VGS = −10 to 0 V; VDD = −20 V;

ID = −1 A; Rgen =6 Ω

−

tbf

−

rise time

VGS = −10 to 0 V; VDD = −20 V;

ID = −1 A; Rgen =6 Ω

−

tbf

−

toff

turn-off switching time

VGS = −10 to 0 V; VDD = −20 V;

ID = −1 A; Rgen =6 Ω

−

tbf

−

Source-drain diode

VSD

source-drain diode forward

voltage

VGD = 0; IS = −1.25 A

−−−1.3

trr

reverse recovery time

IS = −1.25 A; di/dt = 100 A/µs

−

tbf

−

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