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MAC7101 Datasheet(PDF) 33 Page - Freescale Semiconductor, Inc |
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MAC7101 Datasheet(HTML) 33 Page - Freescale Semiconductor, Inc |
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33 / 56 page ![]() ElectricalCharacteristics MAC7100 Microcontroller Family Hardware Specifications, Rev. 1.2 Preliminary Freescale Semiconductor 33 3.13.3 Page Erase Timing The time required to erase a 4 Kbyte program or 1 Kbyte data Flash logical page is calculated using the formulas: Eqn. 22 Eqn. 23 3.13.4 Page Erase Verify Timing The time required to verify that a program Flash page is erased depends on the location of the first non-blank word. The time required for the operation is calculated using the formula: Eqn. 24 The time required to verify that a data Flash page is erased is calculated using the formula: Eqn. 25 3.13.5 Programming Timing Programming time is dependant on the fIPS and fNVMOP frequencies, and is calculated for a single word using the formula: Eqn. 26 Burst programming can be utilized with the program Flash, where up to 32 words in a row can be programmed consecutively by keeping the command pipeline filled. The time to program a consecutive word is calculated using the formula: Eqn. 27 Therefore, the time to program a 32-word row is calculated using the formula: Eqn. 28 Note that burst programming is more than 2 times faster than single word programming. 3.13.6 Data Signature Timing1 The time required to perform a data signature command is dependant on the number of words or half-words compressed during the operation, and is calculated using the formula: Eqn. 29 1. This feature is not available on mask set L49P and L47W devices. t erap 4096 t NVMOP ⋅ 15 + t IPS ⋅ = t erad 1024 t NVMOP ⋅ 15 + t IPS ⋅ = t pevp 4 1024 × 4 ---------------------- ⎝⎠ ⎛⎞ 15 + t IPS × = t pevd 1 1024 × 4 ---------------------- ⎝⎠ ⎛⎞ 15 + t IPS × = t swpgm 9t NVMOP ⋅ 25 t IPS ⋅ + = t bwpgm 4t NVMOP ⋅ 9t IPS ⋅ + = t brpgm t swpgm 31 t bwpgm ⋅ + = t dsig Words or Half-Words 15 + () t IPS ⋅ = |
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