PHP212 datasheet(8/12 Pages) PHILIPS

Part #	PHP212

Description	Dual P-channel enhancement mode MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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8 / 12 page

1997 Jun 18

Philips Semiconductors

Product speciﬁcation

Dual P-channel enhancement mode

MOS transistor

PHP212

Fig.10 Source current as a function of source-drain

diode forward voltage; typical values.

VGD =0.

(1) Tamb = 150 °C; tp = 300 µs; δ =0.

(2) Tamb =25 °C; tp = 300 µs; δ =0.

(3) Tamb = −65 °C; tp = 300 µs; δ =0.

handbook, halfpage

−0.4

−0.8

−1.2

−10

−8

−6

−2

−4

MGG356

(A)

VSD (V)

(1)

(2)

(3)

Fig.11 Drain-source on-state resistance as a

function of gate-source voltage;

typical values.

handbook, halfpage

−10

−2

−4

−6

−8

103

102

MGG357

RDSon

Ω)

VGS (V)

(1)

(2)

(3)

(4)

(5)

(6)

Tamb =25 °C; tp = 300 µs; δ =0.

VDS ≥ ID × RDSon.

(1) ID = 0.1 A.

(2) ID = 0.5 A.

(3) ID =1A.

(4) ID =2A.

(5) ID =4A.

(6) ID =8A.

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