PHP212 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1997 Jun 18

Philips Semiconductors

Product speciﬁcation

Dual P-channel enhancement mode

MOS transistor

PHP212

FEATURES

• High-speed switching

• No secondary breakdown

• Very low on-state resistance.

APPLICATIONS

• Motor and actuator driver

• Power management

• Synchronized rectification.

DESCRIPTION

Two P-channel enhancement mode MOS transistors in an

8-pin plastic SOT96-1 (SO8) package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT96-1 (SO8)

SYMBOL

DESCRIPTION

1s1

source 1

2g1

gate 1

3s2

source 2

4g2

gate 2

5d2

drain 2

6d2

drain 2

7d1

drain 1

8d1

drain 1

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM119

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−−30

VSD

source-drain diode forward voltage

IS = −1.25 A

−−1.3

VGS

gate-source voltage (DC)

−±20

VGSth

gate-source threshold voltage

ID = −1 mA; VDS =VGS

−1

−2.8

drain current (DC)

Ts =80 °C

−−4A

RDSon

drain-source on-state resistance

ID = −2 A; VGS = −10 V

−

0.12

Ω

Ptot

total power dissipation

Ts =80 °C

−

3.5

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