TPS274C65CP_V02 datasheet(7/39 Pages) TI1

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6.4 Thermal Information

THERMAL METRIC(1) (2)

TPS274C65X

UNIT

RHA (VQFN)

40 PINS

RθJA

Junction-to-ambient thermal resistance

25.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

15.8

°C/W

RθJB

Junction-to-board thermal resistance

7.6

°C/W

ψJT

Junction-to-top characterization parameter

0.2

°C/W

ψJB

Junction-to-board characterization parameter

7.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

0.6

°C/W

(1)

For more information about traditional and new thermal metrics, see the SPRA953 application report.

(2)

The thermal parameters are based on a 4-layer PCB according to the JESD51-5 and JESD51-7 standards.

6.5 Electrical Characteristics

VVS = 11 V to 36 V, VVDD = 3.0 V to 5.5 V, TJ = –40°C to 125°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT VOLTAGE AND CURRENT

VDS_Clamp

CHx

VDS clamp voltage

FET current = 10 mA, VS = 24 V

VDS_Clamp

CHx

VDS clamp voltage

FET current = 10 mA, VS = 19 V

VDS_Clamp

CHx

VDS clamp voltage

FET current = 10 mA, VS = 10 V

VS_UVPF

VS undervoltage

protection falling

Measured with respect

to the GND pin of the

device, All channels ON

Output FETs turned off

at VS less than this

threshold.

8.6

9.3

VS_UVPR

VS undervoltage

protection recovery rising

Measured with respect

to the GND pin of the

device, All channels ON

Output FETs turned ON

at VS more than this

threshold.

9.5

10.3

VS_UVPRH

VS undervoltage

protection deglitch time

Time from triggering the UVP fault to FET turn-off

µs

VS_UVWF

VS undervoltage warning

falling

Measured with respect

to the GND pin of the

device,

12.5

13.5

VS_UVWR

VS undervoltage warning

recovery rising

Measured with respect

to the GND pin of the

device,

11.2

13.5

15.8

VS_UVLOF

VS undervoltage lockout

falling

Measured with respect

to the GND pin of the

device

3.0

VS,UVLOR

VS undervoltage lockout

rising

Measured with respect

to the GND pin of the

device

2.7

3.3

VDD,UVLOF

VDD undervoltage

lockout falling

Measured with respect to the GND pin of the device

2.7

2.8

2.9

VDD,UVLOR

VDD undervoltage lockout

rising

Measured with respect to the GND pin of the device

2.8

2.88

2.98

ILNOM

Continuous load current,

per channel

All channels enabled, TAMB = 85°C

1.6

Two channels enabled, TAMB = 85°C

2.5

IOUT,LEAKX

Leakage current from

OUT to GND in OFF

state

Vs = VOUT < 36 V, Switch and all diagnostics

disabled, measured into the OUTx pin

µA

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TPS274C65CP

SLVSH35A – OCTOBER 2023 – REVISED FEBRUARY 2024

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