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IRF7343 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRF7343 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 10 page ![]() l Generation V Technology l Ultra Low On-Resistance l Surface Mount l Fully Avalanche Rated Description D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Max. N-Channel P-Channel Units VDS Drain-Source Voltage 55 -55 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7 IDM Pulsed Drain Current 38 -27 PD@TA = 25°C Maximum Power Dissipation 2.0 W PD@TA = 70°C Maximum Power Dissipation 1.3 W EAS Single Pulse Avalanche Energy 72 114 mJ IAR Avalanche Current 4.7 -3.4 A EAR Repetitive Avalanche Energy 0.20 mJ VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter A Absolute Maximum Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance l Lead-Free IRF7343 Rev:2023A2 1 l VDS (V)=55V l RDS(ON) 50m (VGS = 10V) Features l RDS(ON) 65 m (VGS = 4.5V) l VDS (V)=-55V l RDS(ON) 90m (VGS = 10V) l RDS(ON) 100m (VGS = 4.5V) The SOP-8 has been modified through a customized leadirame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements. mutipe devices can be used in an appication with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Dual N + P Channel MOSFET N-Ch: P-Ch: |
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