… Surface mounted on FR-4 board, t ≤ 10sec.

Parameter

Min. Typ. Max. Units

Conditions

N-Ch 55

VGS = 0V, ID = 250µA

P-Ch -55

VGS = 0V, ID = -250µA

N-Ch

0.059

Reference to 25°C, ID = 1mA

P-Ch

0.054

Reference to 25°C, ID = -1mA

43

50

VGS = 10V, ID = 4.7A „

56

65

VGS = 4.5V, ID = 3.8A „

70

90

V GS= -10V, I D= -3.4A „

95 100

VGS = -4.5V, ID = -2.7A „

N-Ch 1.0

VDS = VGS, ID = 250µA

P-Ch -1.0

VDS = VGS, ID = -250µA

N-Ch 7.9

VDS = 10V, ID = 4.5A „

P-Ch 3.3

VDS = -10V, ID = -3.1A

„

N-Ch

2.0

VDS = 55V, VGS = 0V

P-Ch

-2.0

VDS = -55V, VGS = 0V

N-Ch

25

VDS = 55V, VGS = 0V, TJ = 55°C

P-Ch

-25

VDS = -55V, VGS = 0V, TJ = 55°C

IGSS

Gate-to-SourceForwardLeakage

N-P

±100

VGS = ±20V

N-Ch

24

36

P-Ch

26

38

N-Ch

7.0

10

P-Ch

8. 4

13

N-Ch

8.3

12

P-Ch

14

22

P-Ch

10

15

N-Ch

32

48

P-Ch

43

64

N-Ch

13

20

P-Ch

22

32

N-Ch

740

P-Ch

690

N-Ch

190

210

pF

P-Ch

N-Ch

71

P-Ch

86

V(BR)DSS

Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V

V/°C

Ω

V

S

µA

nC

ns

N-Channel

ID = 4.5A, VDS = 44V, VGS = 10V

„

P-Channel

ID = -3.1A, VDS = -44V, VGS = -10V

N-Channel

VDD = 28V, ID = 1.0A, RG = 6.0Ω,

RD = 16Ω

„

P-Channel

VDD = -28V, ID = -1.0A, RG = 6.0Ω,

RD = 16Ω

N-Channel

VGS = 0V, VDS = 25V, ƒ = 1.0MHz

P-Channel

VGS = 0V, VDS = -25V, ƒ = 1.0MHz

N-Ch

P-Ch

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

2.0

P-Ch

-2.0

N-Ch

38

P-Ch

-27

N-Ch

0.70 1.2

TJ = 25°C, IS = 2.0A, VGS = 0V ƒ

P-Ch

-0.80 -1.2

TJ= 25°C, IS = -2.0A, VGS = 0V ƒ

N-Ch

60

90

P-Ch

54

80

N-Ch

120 170

P-Ch

85

130

Source-Drain Ratings and Characteristics

IS

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

A

V

ns

nC

N-Channel

TJ = 25°C, IF =2.0A, di/dt = 100A/µs

P-Channel

„

TJ = 25°C, IF = -2.0A, di/dt = 100A/µs

‚ N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

Notes:

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

ƒ N-Channel Starting TJ= 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.

P-Channel

Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.

nA

Rev:2023A2

2

m

N-Ch

2.3

3.4

P-Ch

3.0

4.5

P-Ch

10

15

IRF7343

Dual N + P Channel MOSFET