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PLVA650 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PLVA650
Description  Low-voltage avalanche regulator diodes
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PLVA650 Datasheet(HTML) 2 Page - NXP Semiconductors

  PLVA650 Datasheet HTML 1Page - NXP Semiconductors PLVA650 Datasheet HTML 2Page - NXP Semiconductors PLVA650 Datasheet HTML 3Page - NXP Semiconductors PLVA650 Datasheet HTML 4Page - NXP Semiconductors PLVA650 Datasheet HTML 5Page - NXP Semiconductors PLVA650 Datasheet HTML 6Page - NXP Semiconductors PLVA650 Datasheet HTML 7Page - NXP Semiconductors PLVA650 Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 25
2
Philips Semiconductors
Product specification
Low-voltage avalanche regulator diodes
PLVA600A series
FEATURES
• Very low dynamic impedance at
low currents: approximately 1
⁄20 of
conventional series
• Hard breakdown knee
• Low noise: approximately 1⁄10 of
conventional series
• Total power dissipation:
max. 250 mW
• Small tolerances of VZ
• Working voltage range:
nom. 5.0 to 6.8 V
• Non-repetitive peak reverse power
dissipation: max. 30 W.
APPLICATIONS
• Low current, low power, low noise
applications
• CMOS RAM back-up circuits
• Voltage stabilizers
• Voltage limiters
• Smoke detector relays.
DESCRIPTION
High performance voltage regulator
diodes in small SOT23 plastic SMD
packages.
The series consists of PLVA650A to
PLVA668A.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
MAM243
2
n.c.
1
3
21
3
Top view
MARKING
Note
1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
PLVA650A
∗9A
PLVA653A
∗9B
PLVA656A
∗9C
PLVA659A
∗9D
PLVA662A
∗9E
PLVA665A
∗9F
PLVA668A
∗9G
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
−
250
mA
IZRM
repetitive peak working current
tp = 100 µs; δ = 10%
250
mA
PZSM
non-repetitive peak reverse power dissipation tp = 100 µs; Tj = 150 °C30
W
Ptot
total power dissipation
Tamb =25 °C; note 1
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C



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