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PLVA650 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PLVA650 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 May 25 2 Philips Semiconductors Product specification Low-voltage avalanche regulator diodes PLVA600A series FEATURES • Very low dynamic impedance at low currents: approximately 1 ⁄20 of conventional series • Hard breakdown knee • Low noise: approximately 1⁄10 of conventional series • Total power dissipation: max. 250 mW • Small tolerances of VZ • Working voltage range: nom. 5.0 to 6.8 V • Non-repetitive peak reverse power dissipation: max. 30 W. APPLICATIONS • Low current, low power, low noise applications • CMOS RAM back-up circuits • Voltage stabilizers • Voltage limiters • Smoke detector relays. DESCRIPTION High performance voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of PLVA650A to PLVA668A. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage MAM243 2 n.c. 1 3 21 3 Top view MARKING Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. TYPE NUMBER MARKING CODE(1) PLVA650A ∗9A PLVA653A ∗9B PLVA656A ∗9C PLVA659A ∗9D PLVA662A ∗9E PLVA665A ∗9F PLVA668A ∗9G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed circuit-board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZRM repetitive peak working current tp = 100 µs; δ = 10% 250 mA PZSM non-repetitive peak reverse power dissipation tp = 100 µs; Tj = 150 °C30 W Ptot total power dissipation Tamb =25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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