PLVA650 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 May 25

Philips Semiconductors

Product speciﬁcation

Low-voltage avalanche regulator diodes

PLVA600A series

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed circuit-board.

reverse current

VR = 50% VZ nominal

PLVA650A

−

PLVA653A

−

PLVA656A

−

1.1

−

PLVA659A

−

0.9

−

PLVA662A

−

0.9

−

PLVA665A

−

0.9

−

PLVA668A

−

0.8

−

reverse current

VR = 90% VZ nominal

PLVA650A

−

−µA

PLVA653A

−

3.5

−µA

PLVA656A

−

1.3

−µA

PLVA659A

−

1.0

−µA

PLVA662A

−

0.05

−µA

PLVA665A

−

0.04

−µA

PLVA668A

−

0.006

−µA

∆V

line regulation

PLVA659A to PLVA668A

ILO =10 µA; IHi =1mA

−−

0.1

PLVA656A

ILO =50 µA; IHi =1mA

−−

0.1

PLVA650A

ILO = 100 µA; IHi =1mA

−−

0.4

PLVA653A

ILO = 100 µA; IHi =1mA

−−

0.2

noise voltage density

f = 1 kHz; B = 1 kHz; IZ = 250 µA

−−

1.0

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

330

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

µV

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