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IRF7313 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRF7313 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 7 page  Description Symbol Maximum Units Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TA = 25°C 6.5 TA = 70°C 5.2 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction) IS 2.5 TA = 25°C 2.0 TA = 70°C 1.3 Single Pulse Avalanche Energy EAS 82 mJ Avalanche Current IAR 4.0 A Repetitive Avalanche Energy EAR 0.20 mJ Peak Diode Recovery dv/dt dv/dt 5.8 V/ ns Junction and Storage Temperature Range TJ,TSTG -55 to + 150 °C Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 62.5 °C/W Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Continuous Drain Current Maximum Power Dissipation A ID PD V W D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 l Generation V Technology l Ultra Low On-Resistance l Surface Mount l Fully Avalanche Rated l Lead-Free Rev:2023A2 1 The SOP-8 has been modified through a customized eadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of powerapplications. With theseimprovements.multiple devices can be usedinanappication with dramatica v reduced board space. The package is designed for vapor phase, infra red, or wave sodering technigues. l VDS (V)=30V l RDS(ON) 29m (VGS = 10V) Features l RDS(ON) 46 m (VGS = 4.5V) IRF7313 Dual N Channel MOSFET |
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