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IRF7401 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRF7401 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 8 page ![]() Benefits Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Thermal Resistance Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Parameter Max. Units ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 4.5V 10 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 8.7 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.0 IDM Pulsed Drain Current 35 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings A IRF7401 Environmentally Increased Reliability l l Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V) l l l l l l Rev:2023A2 1 SOP-8 8 1 2 3 4 5 6 7 D D D D G S A S S A N-Channel MOSFET |
Similar Part No. - IRF7401 |
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Similar Description - IRF7401 |
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