Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ ISD ≤ 4.1A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

„ Surface mounted on FR-4 board, t ≤ 10sec.

Rev:2023A2

2

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

20

V

VGS = 0V, ID = 250µA

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

0.044

V/°C Reference to 25°C, ID = 1mA

22

VGS = 4.5V, ID = 4.1A ƒ

30

VGS = 2.7V, ID = 3.5A

ƒ

VGS(th)

Gate Threshold Voltage

0.70

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

11

VDS = 15V, ID = 4.1A

1.0

VDS = 16V, VGS = 0V

25

VDS = 16V, VGS = 0V, TJ = 125 °C

Gate-to-Source Forward Leakage

100

VGS = 12V

Gate-to-Source Reverse Leakage

-100

VGS = -12V

Qg

Total Gate Charge

48

ID = 4.1A

Qgs

Gate-to-Source Charge

5.1

nC

VDS = 16V

Qgd

Gate-to-Drain ("Miller") Charge

20

VGS = 4.5V, See Fig. 6 and 12 ƒ

td(on)

Turn-On Delay Time

13

VDD = 10V

tr

Rise Time

72

ID = 4.1A

td(off)

Turn-Off Delay Time

65

RG = 6.0Ω

tf

Fall Time

92

RD = 2.4Ω, See Fig. 10 ƒ

Between lead tip

and center of die contact

Ciss

Input Capacitance

1600

VGS = 0V

Coss

Output Capacitance

690

pF

VDS = 15V

Crss

Reverse Transfer Capacitance

310

ƒ = 1.0MHz, See Fig.

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode) 

p-n junction diode.

VSD

Diode Forward Voltage

1.0

V

TJ = 25°C, IS = 2.0A, VGS = 0V ƒ

trr

Reverse Recovery Time

39

59

ns

TJ = 25°C, IF = 4.1A

Qrr

Reverse RecoveryCharge

42

63

nC

di/dt = 100A/µs ƒ

ton

Forward Turn-On Time

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

35

3.1

A

S

D

G

IGSS

IDSS

Drain-to-Source Leakage Current

LS

Internal Source Inductance

4.0

L

D

Internal Drain Inductance

2.5

nH

ns

nA

µA

Ω

RDS(ON)

Static Drain-to-Source On-Resistance

S

D

G

m

IRF7401

N-Channel MOSFET