FDN361 datasheet(1/5 Pages) EVVOSEMI

Part #	FDN361

Description	MOSFET

PDF	5 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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General Description

These devices are particularly suited for low voltage

applications in notebook computers, portable phones,

PCMCIA cards, and other battery powered circuits

where fast switching, and low in-line power loss are

needed in a very small outline surface mount package.

D

S

G

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

r 20

V

ID

Drain Current

– Continuous

(Note 1a)

1.4

A

– Pulsed

10

Power Dissipation for Single Operation

(Note 1a)

0.5

PD

(Note 1b)

0.46

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

qC

Thermal Characteristics

RTJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

qC/W

RTJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

FDN361

SOT–23

1. GATE

2. SOURCE

3. DRAIN

Rev:2023A2

1

Features

VDS (V) = 30V

RDS(ON)

110m

(VGS = 10V)

RDS(ON)

160m

(VGS = 4.5V)

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FDN361 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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