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IRLML0040 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # IRLML0040
Description  MOSFET
PDF  7 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRLML0040 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 3.2 A
30
Ω
VGS = 4.5 V, ID = 2.8 A
33
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.8 A
11
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
335
pF
Output Capacitance
Coss
45
Reverse Transfer Capacitance
Crss
17
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 3.4 A
4.5
6.7
nC
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
2.1
3.2
Gate-Source Charge
Qgs
0.85
Gate-Drain Charge
Qgd
0.65
Gate Resistance
Rg
f = 1 MHz
0.8
4.4
8.8
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 5.6 Ω
ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω
12
20
ns
Rise Time
tr
50
75
Turn-Off Delay Time
td(off)
12
20
Fall Time
tf
22
35
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 5.6 Ω
ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω
510
Rise Time
tr
12
20
Turn-Off Delay Time
td(off)
10
15
Fall Time
tf
510
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.4
A
Pulse Diode Forward Current
ISM
15
Body Diode Voltage
VSD
IS = 2.7 A, VGS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C
10
20
ns
Body Diode Reverse Recovery Charge
Qrr
510
nC
Reverse Recovery Fall Time
ta
6
ns
Reverse Recovery Rise Time
tb
4
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
31
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
0.7
2.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
1.1
8
Rev:2023A2
2
IRLML0040
m



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